1 US3003 p-ch 30v fast switching mosfets symbol parameter rating units 10s steady state v ds drain-source voltage -30 v v gs gate-sou r ce voltage 20 v i d @t a =25 continuous drain current, v gs @ -10v 1 -5.5 -4.8 a i d @t a =70 continuous drain current, v gs @ -10v 1 -4.3 -3.8 a i dm pulsed drain current 2 -24 a p d @t a =25 total power dissipation 3 1.32 1 w p d @t a =70 total power dissipation 3 0.84 0.64 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 125 /w r ja thermal resistance junction-ambient 1 (t 10s) --- 95 /w r jc thermal resistance junction-case 1 --- 80 /w id -30v 32m ? -4.8a the US3003 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the US3003 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sot23 pin configuration product summery bv dss r ds(on)
2 p-ch 30v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.022 --- v/ r ds(on) static drain-source on-resistance 2 v gs =-10v , i d =-4a --- 26 32 m v gs =-4.5v , i d =-2a --- 36 45 v gs(th) gate threshold voltage v gs =v ds , i d =-250ua -1.0 -1.5 -2.5 v v gs(th) v gs(th) temperature coefficient --- 4.6 --- mv/ i dss drain-source leakage current v ds =-24v , v gs =0v , t j =25 --- --- 1 ua v ds =-24v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-5v , i d =-4a --- 15.8 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 13 26 q g total gate charge (-4.5v) v ds =-15v , v gs =-4.5v , i d =-4a --- 12.6 17.6 nc q gs gate-source charge --- 4.52 6.3 q gd gate-drain charge --- 4.72 6.6 t d(on) turn-on delay time v dd =-15v , v gs =-10v , r g =3.3 , i d =-4a --- 4.8 9.6 ns t r rise time --- 35 63.0 t d(off) turn-off delay time --- 42 84 t f fall time --- 21 42.0 c iss input capacitance v ds =-15v , v gs =0v , f=1mhz --- 1345 1883 pf c oss output capacitance --- 194 272 c rss reverse transfer capacitance --- 158 221 symbol parameter conditions min. typ. max. unit i s continuous source current 1,4 v g =v d =0v , force current --- --- -4.8 a i sm pulsed source current 2,4 --- --- -24 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1.2 v t rr reverse recovery time i f =-4a , di/dt=100a/s , t j =25 --- 18.3 --- ns q rr reverse recovery charge --- 7.2 --- nc electrical characteristics (t j =25 , unless otherwise noted) diode characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. US3003
3 p-ch 30v fast switching mosfets 28 33 38 43 48 46810 -v gs (v) r dson (m ? ) i d =-4a 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 -v s d , source-to-drain voltage (v) -i s source current(a) t j =150 t j =25 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j US3003
4 p-ch 30v fast switching mosfets 10 100 1000 10000 1 5 9 13 17 21 25 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) p dm d = t on /t t jpeak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 gate charge waveform US3003
|
